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| Rev. 1.0 BSP125 SIPMOS(R) Power-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 600 45 0.12 SOT-223 V A Type BSP125 Package SOT-223 Ordering Code Q62702-S654 Tape and Reel Information E6327: 3000 pcs/reel Marking BSP125 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current TA=25C TA=70C Value 0.12 0.1 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 0.48 6 20 Class 1 1.8 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.12A, VDS =480V, di/dt=200A/s, T jmax=175C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25C, T A=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-02-26 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP125 Symbol min. RthJS RthJA - Values typ. max. 25 Unit K/W - 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=0.25mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 600 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, V GS = VDS ID=94A Zero gate voltage drain current VDS=600V, VGS=0, Tj =25C VDS=600V, VGS=0, Tj =125C A 10 26 25 0.1 5 100 60 45 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.11A Drain-source on-state resistance VGS=10V, ID=0.12A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-02-26 Rev. 1.0 BSP125 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =400V, ID =0.13A, VGS =0 to 10V VDD =400V, ID =0.13A Symbol Conditions min. Values typ. 0.18 100 8.2 3.2 7.7 14.4 20 110 max. 150 12.3 4.8 11.6 21 30 165 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS2*ID*RDS(on)max, ID=0.1A VGS=0, VDS=25V, f=1MHz 0.06 - S pF VDD=300V, VGS =10V, ID=0.13A, RG =6 ns - 0.27 2.3 4.4 3.44 0.3 3.5 6.6 - nC V(plateau) VDD =400V, ID =0.13A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF=0.12A VR=300V, IF=lS, diF/dt=100A/s IS TA=25C - 0.8 156 165 0.12 0.48 1.2 235 250 A V ns nC Page 3 2003-02-26 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.9 BSP125 BSP125 2 Drain current ID = f (TA) parameter: VGS 10 V 0.13 BSP125 W 1.6 1.4 A 0.11 0.1 0.09 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.08 0.07 0.06 0.05 0.6 0.4 0.2 0 0 0.04 0.03 0.02 0.01 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 10 1 BSP125 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP125 A K/W 10 0 10 1 /ID 10 -1 R ) (on DS = V DS 1 ms Z thJC 10 0 D = 0.50 t = 270.0s p ID 10 ms 0.20 0.10 10 -2 10 -1 single pulse DC 0.05 0.02 0.01 10 -3 0 10 10 1 10 2 V 10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2003-02-26 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.3 BSP125 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 100 10V 6.0V A 5.0V 4.0V 3.8V 3.6V 3.2V 0.2 3.0V 2.8V 2.6V 0.15 R DS(on) 60 2.6V 2.8V 3.0V 3.2V 3.6V 4.0V 5.0V 6.0V 10V ID 40 0.1 20 0.05 0 0 1 2 3 4 5 6 7 8 V 10 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 A 0.5 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.5 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.4 S A 0.3 gfs V ID 0.3 0.25 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 0 0 0.1 0.2 0.3 A 0.5 VGS ID Page 5 2003-02-26 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.12 A, VGS = 10 V 170 BSP125 BSP125 (.) Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =94A 2.8 140 98% RDS(on) 120 100 80 VGS(th) 2 1.6 typ. 1.2 60 98% 0.8 40 typ 20 0 -60 0.4 2% -20 20 60 100 C 180 0 -60 -20 20 60 100 C Tj 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 BSP125 pF A 10 2 10 -1 C 10 1 IF 10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -3 0 8 16 24 32 40 V VDS 52 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-02-26 Rev. 1.0 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.12 A pulsed, Tj = 25 C 16 V BSP125 BSP125 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) BSP125 720 V V(BR)DSS 0.2 VDS max 0.5 VDS max 0.8 VDS max nC 12 680 660 640 620 VGS 10 8 6 600 4 580 560 540 -60 2 0 0 1 2 3 4 5 6.5 -20 20 60 100 C 180 QG Tj Page 7 2003-02-26 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP125 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-02-26 |
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